Customized Aluminum Nitride Aln Wafer for Electronics

• Customization: Available
• Application: Refractory, Structure Ceramic, Industrial Ceramic
• Conductive Layer: Thick Film Resistor
• Model NO.: YNA007
• Material: Aluminum Nitride Ain
• Process: Low-Temperature Co-fired Ceramic
• Thickness: 0.25 mm
• Color: Grey
• Shape: Cylindrical, Rectangular, Tubular, Round
• Use: in Heat Sinks and Spreaders, Good Wear Resistance
• Working Temperature: 1600c, 1700c, 1800c
• Type: Crucible
• Transport Package: Plywood Cases
• Specification: CUSTOMIZED
• Trademark: Yunnuo
• Origin: China
• HS Code: 8547100000
• Production Capacity: 50000 PCS Per Year
• Package Size: 10.00cm * 10.00cm * 2.00cm
• Package Gross Weight: 0.002kg

Product Description

AIN crystal is a covalent bond compound with AIN4 tetrahedron as the structural unit, and has a wurtzite structure, belonging to the hexagonal crystal system. Chemical composition AI 65.81%, N 34.19%, specific gravity 3.261g/cm3, white or off-white.



Characteristics:

(1) High thermal conductivity;
(2) High insulation;
(3) Low thermal expansion coefficient (4.×10-6ºC) matches with Si (3.5~4×10-6ºC) and GaAs (6×10-6ºC);
(4) Excellent electrical properties (dielectric constant, dielectric loss, volume resistivity, dielectric strength);
(5) Good mechanical properties;
(6) Good corrosion resistance;
(7) Good optical transmission characteristics;

Application:
 

 1. Power Electronic Device

 2. High Brightness LED

 3. Communication Device

 

Standard & custom substrate available
Standard squares: 25.4, 50.8, 57.1, 63.5, 76.2, 101.6, 114.3, 121.9 mm 
Standard rounds: 100, 150 mm 
Thicknesses available: 0.2 - 3.556 mm 

 

Item	UNIT	Value
Bulk density	g/cm3	3.3
Colour	-	Grey
Compressive strength	MPA	500-700
Rupture strength	MPA	150-180
Flexural strength	N/mm3	450
Dielectric strength	GPA	200-250
Thermal Conductivity	W/MK	160-190
Thermal expansion coefficient	10-6/C	4.6
Dielectric loss	10-4 at 1MHZ	5
Resistivity	Ohm-m	>1014